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DOI:
:2006,19(2):-
本文二维码信息
CTR的导电机理研究
孙健1 甘朝钦2 刘英3 吴宗汉2
(1南京师范大学 电气与自动化工程学院,江苏 南京 210042; 2东南大学 物理系,江苏 南京 210096;3 江苏兴顺电子元件厂,江苏 兴化225700)
The conducting mechanism of V-P-Fe C.T.RS
SUN jian1 GAN Chao-qing2 LIU Yin3 WU Zong-han2
(1. College of Electric and Automation Engineering, Nanjing Normal University, Nanjing 210042, China; 2. Department of Physics,Southeast University,Nanjing 210096, China;3.Jiangsu Xinshun Electronics Device.Ltd. Xinghua 225700, China)
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中文摘要: 为了优化CTR(Critical Temperature Resister)产品性能,从微观上分析CTR晶粒体相变临界特征和粒界的电势垒,得出CTR临界阻温特性是由晶粒体导电性能和粒界电势垒共同决定,即“晶粒体-粒界”模型。运用此模型对不同配料比样品的临界阻温特性进行分析,得出V2O5:P2O5:Fe2O3配料比是影响CTR性能的关键因素。
Abstract:In order to enhance the CTR(Critical Temperature Resister) product performance, microcosmic analyzes the CTR crystal grain body to phase change the critical characteristic and the grain of electricity potential barrier . Obtains the CTR critical resistance temperature characteristic is decided together by the crystal grain body electric conductivity and the grain of electricity potential barrier. The model carries on the analysis using "the crystal grain body - grain" to the different ingredient compared to the sample critical resistance temperature characteristic, obtains V2O5:P2O5:Fe2O3 ingredient ratio is affects the CTR performance the key aspect.
文章编号:cg060247     中图分类号:    文献标志码:
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孙健1  $22  $23  $22 1南京师范大学 电气与自动化工程学院,江苏 南京 210042; 2东南大学 物理系,江苏 南京 210096;3 江苏兴顺电子元件厂,江苏 兴化225700
SUN jian1 GAN Chao-qing2 LIU Yin3 WU Zong-han2 1. College of Electric and Automation Engineering, Nanjing Normal University, Nanjing 210042, China; 2. Department of Physics,Southeast University,Nanjing 210096, China;3.Jiangsu Xinshun Electronics Device.Ltd. Xinghua 225700, China
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