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中文摘要: 单晶硅SO I 高温压力传感器是一种新型高性能高温压力传感器。它与扩散硅压力传感器相比有较高的工作
温度, 与多晶硅高温压力传感器相比有更高的工作灵敏度。这主要得益于它采用了单晶硅膜的SO I 结构。本文给出
了这种压力传感器的工艺生产过程, 并相对深入地讨论了各向异性腐蚀硅杯和静电封接这两道工序。介绍了此种
压力传感器的工作原理。最后给出了测试结果及结论。
中文关键词: 单晶硅SO I 结构 灵敏度 高温压力传感器
Abstract:H igh2temperature SO IMonocrystal2silicon P ressure Sensor is a new type h igh2temperature p ressure
sensor w ith h igh performances. Compared w ith DopedMono2crystalline Silicon P ressure Sensor, it show s great
advantages in h igh operating temperature. A nd it show s a h igher sensitivity over h igh2temperature Polysilicon
P ressure Sensor. These benefit from the SO IMonocrystal2silicon structure it possesses. Th is paper reports the
fabrication p rocesses of th is p ressure sensor and discusses two techniques, silicon anisotrop ic etch ing and Si2
Glass anodic bonding, in detail. Th is paper also discusses operation p rincip le of it. A t last, the testing results
are p resented and a conclusion ismade.
文章编号：cg020412 中图分类号： 文献标志码：
基金项目:
L I Y ug ang YA O S uy ing ZH A N G S heng cai ZH A O Y iqiang ZH A N G W ei ZH A N G W eix in
S chool of electronics and inf orm ation eng ineering , T ianj in U niversity , T ianj in, 300072 P. R. China
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